A new technique for deriving the electron mobility as minority carriers in semiconductor materials is introduced. The technique is based on the modulation of the Hall voltage through the introduction of a low‐level optical injection. The photogenerated excess carriers produce a signal which is a function of the magnetic field, the carrier mobilities and concentrations, and the concentration of excess carriers and thus to their lifetime. The measurement is easy to implement and it can be performed along with the measurement of the Hall coefficient and the conductivity. The only modification needed in a conventional galvanomagnetic setup is the introduction of a chopped low‐intensity laser. Using these three simultaneous measurements, we determined the equilibrium carrier concentrations, the two mobilities, and the effective excess carrier lifetime ofp‐type HgCdTe narrow gap semiconductor. This novel technique allows us to present the mobility of electrons as minority‐carrier throughout the temperature range of 13.6–300.2 K in this material.