SIMS studies on anomalous behavior of phosphorus and other implants in silicon
作者:
PaulK. Chu,
Dachang Zhu,
G.H. Morrison,
期刊:
Radiation Effects
(Taylor Available online 1982)
卷期:
Volume 61,
issue 3-4
页码: 201-205
ISSN:0033-7579
年代: 1982
DOI:10.1080/00337578208229933
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
A phosphorus implant inp-type silicon was analyzed by SIMS, and both the implant profile and the matrix signal were observed to exhibit some anomalous behavior. Further studies revealed the same behavior in other implants. This phenomenon was observed when ann-type dopant was implanted into ap-type matrix, or vice versa. However, some exceptions arose, making the interpretation difficult. The use of matrix signal normalization was adopted and found to improve the results.
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