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Autocompensation in molecular beam epitaxial gallium arsenide: The (110) orientation

 

作者: J. M. Ballingall,   C. E. C. Wood,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1983）
卷期: Volume 1, issue 2  

页码: 162-165

 

ISSN:0734-211X

 

年代: 1983

 

DOI:10.1116/1.582524

 

出版商: American Vacuum Society

 

关键词: orientation;molecular beam epitaxy;silicon ions;crystal doping;doped materials;gallium arsenides;photoluminescence;optical properties;electrical properties;silicon

 

数据来源: AIP

 

摘要:

Autocompensation has been studied on the (100) and (110) orientations of gallium arsenide. Bothn‐ andp‐type silicon‐doped (110) gallium arsenide films have been grown by only varying the substrate temperature. Electrical and optical data show thatn‐type (110) films are heavily autocompensated with silicon.

 

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