The Hall effect and resistivity have been measured as a function of temperature for lightly Zn‐doped GaAs of better quality than previously available. Analysis of the Hall coefficient data yields activation energies which change with doping level. These results, along with earlier results on more heavily doped samples, can be represented byEA=0.0308−2.34×10−8(NIA)1/3eV. The Hall mobility as a function of temperature leads to &mgr;L=400(300/T)2.41for the lattice mobility ofp‐type GaAs.