By placing several Si &dgr;‐doped layers close to the surface of a GaAs molecular beam epitaxy–grown crystal, we achieve a compensation of the Schottky barrier and obtain a good Ohmic contact between aninsitudeposited (without breaking the vacuum) Al metallization layer and a highly modulation doped (n++) conduction layer embedded below the &dgr;‐doped layers in the GaAs crystal. When cooled to below the critical temperature (≊1.2 K) of Al, superconductivity is induced in the conductive layer of the semiconductor. We have studied the current voltage (I–V) characteristics in a planar geometry where the Al has been removed in a thin stripe. We find a manifestation of the superconducting energy gap and a rich fine structure at injection energies both below and above the gap. ©1996 American Institute of Physics.