Properties of strained layer InxAl1−xAs/InP heterostructures
作者:
P. Chu,
H. H. Wieder,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1988)
卷期:
Volume 6,
issue 4
页码: 1369-1372
ISSN:0734-211X
年代: 1988
DOI:10.1116/1.584223
出版商: American Vacuum Society
关键词: HETEROSTRUCTURES;ALUMINIUM ARSENIDES;INDIUM ARSENIDES;INDIUM PHOSPHIDES;ENERGY GAP;MOLECULAR BEAM EPITAXY;X−RAY DIFFRACTION;PHOTOLUMINESCENCE;ELASTICITY;MECHANICAL PROPERTIES;THICKNESS;(Al,In)As;InP
数据来源: AIP
摘要:
X‐ray diffraction and photoluminescence measurements were made on InxAl1−xAs layers grown by molecular‐beam epitaxy whose lattice constants are matched, in tension, or in compression, relative to their (100)‐oriented InP substrates. Using a linear interpolation between the InAs and AlAs elastic stiffness coefficients, hydrostatic pressure coefficients, and shear deformation potentials, the strain‐dependent fundamental band gaps were calculated and shown to be in good agreement with the experimentally measured data within the pseudomorphic limit. The calculated composition‐dependent critical thickness for the onset of plastic deformation of these layers is shown to be in better agreement with the energy balance model of People and Bean than the mechanical equilibrium model of Matthews and Blakeslee.
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