The electromigration velocities of a liquid gallium inclusion in single‐crystal silicon follow an Arrhenius relationship with temperature. The activation energy is 14.5 kcal/mol and the preexponential factor is 2.1×10−5cm3/C. Electromigration velocities are linearly proportional to the applied electric current density. Ga inclusions electromigrate towards the cathode at all temperatures. The electron‐atom momentum exhange is the principal electromigration driving force. Peltier‐induced temperature‐gradient zone melting contributes less than 1% of the observed electromigration velocity. Current funneling into the gallium‐doped redeposited‐silicon train behind the electromigrating inclusion can increase the current density passing through the inclusion by up to a factor of 10. At temperatures below 500 °C, current diversion by rectification by thep‐I junction between the doped inclusion trail and the parent silicon crystal inhibits gallium‐inclusion electromigration.