Excitation density dependence of photoluminescence in GaN:Mg
作者:
Eunsoon Oh,
Hyeongsoo Park,
Yongjo Park,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 1
页码: 70-72
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.120647
出版商: AIP
数据来源: AIP
摘要:
Continuous redshift of an emission from 3.23 to 2.85 eV with decreasing excitation density is observed in the photoluminescence spectra of highly doped GaN:Mg. It has been explained by the formation of minibands originating from the overlap of deep levels and shallow acceptor levels. For nominally undoped samples the intensity ratio of a donor-bound exciton line and a donor–acceptor pair line changes dramatically with excitation density due to the limited number of acceptors. ©1998 American Institute of Physics.
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