首页   按字顺浏览 期刊浏览 卷期浏览 Photoresist channel‐constrained deposition of electroless metallization on ligating sel...
Photoresist channel‐constrained deposition of electroless metallization on ligating self‐assembled films

 

作者: Jeffrey M. Calvert,   Gary S. Calabrese,   John F. Bohland,   Mu‐San Chen,   Walter J. Dressick,   Charles S. Dulcey,   Jacque H. Georger,   John Kosakowski,   Edward K. Pavelcheck,   Kee W. Rhee,   Loretta M. Shirey,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1994）
卷期: Volume 12, issue 6  

页码: 3884-3887

 

ISSN:1071-1023

 

年代: 1994

 

DOI:10.1116/1.587568

 

出版商: American Vacuum Society

 

关键词: THIN FILMS;SILANES;METALLIZATION;PHOTORESISTS;ULTRAVIOLET RADIATION;ELECTRON BEAMS;DEPOSITION;SILICON;NICKEL;Si;Ni;SELF−ASSEMBLED FILMS;PATTERNING

 

数据来源: AIP

 

摘要:

Patterned, selective electroless deposition has been achieved using exposed and developed photoresists, produced with UV and e‐beam exposure sources, to create channels for constrained metal growth on ligating self‐assembled film surfaces. This process is attractive for the production of high‐resolution, etching‐resistant features for semiconductor integrated circuit (IC) fabrication, as well as for the fabrication of patterned metal lines for IC‐level and (PWB)‐level interconnects. Etched metal features with linewidths of 150 nm have been demonstrated.

 

点击下载:  PDF (384KB)



返 回