Two‐dimensional distributions of secondary defects in focused ion beam implantation into Si
作者:
M. Tamura,
S. Shukuri,
Y. Madokoro,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1988)
卷期:
Volume 6,
issue 3
页码: 996-1000
ISSN:0734-211X
年代: 1988
DOI:10.1116/1.584296
出版商: American Vacuum Society
关键词: ION IMPLANTATION;ANNEALING;CRYSTAL DEFECTS;DOPING PROFILES;VERY HIGH TEMPERATURE;IMPURITIES;ION COLLISIONS;ION BEAMS;BORON IONS;SILICON;PHOSPHORUS IONS;KEV RANGE 100−1000;MONTE CARLO METHOD;Si
数据来源: AIP
摘要:
Annealing behavior of structure, nature, and two‐dimensional depth distributions of secondary defects in one‐line‐scan, 70‐keV focused ion beam B‐implanted (100) Si have been investigated mainly using cross‐sectional transmission electron microscopy observations. In as‐implanted layers for doses above 3×1015/cm2, triangular amorphous regions are formed with a two‐dimensional spread on the order of a 0.2 μm, which is approximately an ion beam diameter. Secondary defects generated by annealing above 800 °C are confined within these triangular regions. By contrast, when 8×1014/cm2implanted layers are annealed at 1000 °C, two‐dimensional spreads of the grown defects vary from 0.2 to 0.6 μm in each implanted layer. However, in annealing at 800 °C, these defects remain near the projected range of boron and their lateral spread is confined to a beam diameter. Some results are discussed in comparison with two‐dimensional impurity distributions, 140‐keV P++implantation, and Monte Carlo simulations.
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