High‐speed single‐layer‐resist process and energy‐dependent aspect ratios for 0.2‐μm electron‐beam lithography
作者:
Fumio Murai,
Jiro Yamamoto,
Hidenori Yamaguchi,
Shinji Okazaki,
Kazuhiko Sato,
Keiko Hasegawa,
Hajime Hayakawa,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1994)
卷期:
Volume 12,
issue 6
页码: 3874-3878
ISSN:1071-1023
年代: 1994
DOI:10.1116/1.587566
出版商: American Vacuum Society
关键词: LITHOGRAPHY;PHOTORESISTS;ELECTRON BEAMS;VLSI;ENERGY DEPENDENCE;ASPECT RATIO;IMAGE FORMING
数据来源: AIP
摘要:
For industrial application of an electron beam direct writing a single‐layer‐resist (SLR) process is more attractive than a multilayer‐resist process, because the SLR process is less expensive and provides a precise pattern transfer for 0.2‐μm large scale integration circuit fabrication. Three key factors for SLR process are (1) high acceleration voltage for clear latent image, (2) high‐contrast resist to attain a high‐aspect‐ratio pattern, and (3) rapid dissolving resist with little effect on the substrate. With 50‐kV acceleration voltage an aspect ratio of resist pattern of about 5 is obtainable using a chemically amplified resist. However, pattern collapse limits the maximum aspect ratio for smaller resist patterns. A positive‐tone resist (PSR) and negative‐tone resist (RE‐4200N) showed excellent characteristics for a SLR process with a 0.2‐μm feature size.
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