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Gain recovery time of traveling‐wave semiconductor optical amplifiers

 

作者: G. Eisenstein,   R. S. Tucker,   J. M. Wiesenfeld,   P. B. Hansen,   G. Raybon,   B. C. Johnson,   T. J. Bridges,   F. G. Storz,   C. A. Burrus,  

 

期刊: Applied Physics Letters  （AIP Available online 1989）
卷期: Volume 54, issue 5  

页码: 454-456

 

ISSN:0003-6951

 

年代: 1989

 

DOI:10.1063/1.100950

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We propose a mechanism which may shorten the gain recovery time in semiconductor optical amplifiers. The mechanism is carrier diffusion from nearby carrier storage regions (carrier reservoirs), which enhances the carrier recovery process in the active region and consequently reduces the gain recovery time. Bias‐independent recovery times as short at 100 ps are demonstrated in a 1.3‐&mgr;m traveling‐wave amplifier.

 

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