New photoluminescence lines in GaAs layers grown by metalorganic vapor phase epitaxy
作者:
A. P. Roth,
R. G. Goodchild,
S. Charbonneau,
D. F. Williams,
期刊:
Journal of Applied Physics
(AIP Available online 1983)
卷期:
Volume 54,
issue 6
页码: 3427-3430
ISSN:0021-8979
年代: 1983
DOI:10.1063/1.332458
出版商: AIP
数据来源: AIP
摘要:
A set of luminescence lines previously observed only in GaAs layers grown by molecular beam epitaxy (MBE) has been observed for the first time in layers grown by metalorganic vapor phase epitaxy (MOVPE). The lines which appear between 1.5515 and 1.504 eV are more evident in samples grown with low arsine concentrations and low substrate temperatures. It appears that these additional lines are due to recombinations involving native defects. Unlike the MBE case, extrinsic impurities from the reactants are incorporated in the layers during the growth, thus reducing the concentration of native defects responsible for the additional lines.
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