Si3N4on GaAs by direct electron cyclotron resonance plasma assisted nitridation of Si layer in Si/GaAs structure
作者:
D. M. Diatezua,
Z. Wang,
D. Park,
Z. Chen,
A. Rockett,
H. Morkoc,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1998)
卷期:
Volume 16,
issue 2
页码: 507-510
ISSN:1071-1023
年代: 1998
DOI:10.1116/1.590300
出版商: American Vacuum Society
关键词: SILICON NITRIDES;GALLIUM ARSENIDES;NITRIDATION;SILICON;ELECTRON CYCLOTRON-RESONANCE;PHOTOELECTRON SPECTROSCOPY;TRAPS;INTERFACES;GaAs;Si3N4
数据来源: AIP
摘要:
Si3N4has been produced on GaAs with low interface trap densities by electron cyclotron resonanceN2–Heplasma assisted nitridation of a Si layer deposited on a GaAs (100) substrate. Nitridation at 150 and 400 °C was monitored by x-ray photoelectron spectroscopy (XPS) and produced stoichiometricSi3N4.The nitride layer thickness, as determined from XPS as a function of photoelectron takeoff angle, initially increased rapidly with nitridation time with a transition at a thickness of 12–18 Å to slower growth. Capacitance/voltage and conductance/angular frequency measurements were performed on metal-insulator-semiconductor capacitors fabricated from the nitrided samples. The results demonstrated interface trap densities with a minimum of3.0×1011 eV−1 cm−2when nitrided at 150 °C. At 400 °C the nitridation produced a poor quality interface, which resulted either from the higher temperature or from nitridation of all of the Si, leaving theSi3N4in direct contact with the GaAs.
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