Low-temperature (200 °C) sputter deposition ofSrTiO3(STO) thin films by using ultrahigh-density ceramic target enabled us to fabricate capacitors on polyimide-isoindroquinazoline dione (PIQ)- or benzocyclobutene (BCB)-coated alloy substrates. Complex impedances of the capacitors were analyzed. Capacitances of the0.01 mm2area capacitors with 200-nm-thick STO films were around 22 pF and were not dependent on frequency up to 8 GHz. Leakage-current densities of the films were lower than10−6 A/cm2at an applied voltage of 10 V and dielectric loss tangents were lower than10−6.©1998 American Institute of Physics.