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Transverse magnetoresistance and Hall effect in wide‐gap, p‐type Hg1−xMnxTe

 

作者: J. R. Anderson,   W. B. Johnson,   D. R. Stone,  

 

期刊: Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films  （AIP Available online 1983）
卷期: Volume 1, issue 3  

页码: 1761-1764

 

ISSN:0734-2101

 

年代: 1983

 

DOI:10.1116/1.572211

 

出版商: American Vacuum Society

 

关键词: magnetoresistance;hall effect;band structure;manganese tellurides;mercury tellurides;manganese ions;temperature effects;ultralow temperature;low temperature;very low temperature;medium temperature;magnetic field effects;hopping

 

数据来源: AIP

 

摘要:

A low frequency ac measuring‐current technique has been used to investigate the magnetoresistance and Hall effect in Hg1−xMnxTe over a temperature range from 2 to 300 K. The exchange interaction between the Mn++ions and the band carriers causes the energy bands to be significantly modified in the presence of a magnetic field. As a result magnetic boil‐off and magnetic‐field‐enhanced hopping have been observed inp‐type semiconducting samples. These effects produce a large decrease of resistance with increasing magnetic field at low temperatures.

 

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