Use of a semiconductor detector for measurement of high energy end loss ions from a tandem mirror
作者:
T. Saito,
M. Sakakibara,
Y. Kiwamoto,
Y. Tatematsu,
Y. Yoshimura,
M. Ichimura,
T. Tamano,
期刊:
Review of Scientific Instruments
(AIP Available online 1997)
卷期:
Volume 68,
issue 3
页码: 1433-1437
ISSN:0034-6748
年代: 1997
DOI:10.1063/1.1147629
出版商: AIP
数据来源: AIP
摘要:
A semiconductor detector is applied for measurement of high energy end loss ions (E⩾15 keV) from a tandem mirror. Its energy sensitivity to protons calibrated by using a monochromatic ion source is found to be the same as that to electrons. The semiconductor detector is installed on an end wall of the GAMMA 10 tandem mirror and high energy end loss ions are observed with the detector when ions in the confinement region are strongly heated by ion cyclotron waves. Counts of high energy end loss ions are closely related with a diamagnetic signal representing ion heating. The energy of the end loss ions spreads with time and attains to 50–60 keV. Time behavior of the ion count suggests that unknown loss processes other than classical Coulomb scattering are relevant to ion end loss. ©1997 American Institute of Physics.
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