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Use of a semiconductor detector for measurement of high energy end loss ions from a tandem mirror

 

作者: T. Saito,   M. Sakakibara,   Y. Kiwamoto,   Y. Tatematsu,   Y. Yoshimura,   M. Ichimura,   T. Tamano,  

 

期刊: Review of Scientific Instruments  (AIP Available online 1997)
卷期: Volume 68, issue 3  

页码: 1433-1437

 

ISSN:0034-6748

 

年代: 1997

 

DOI:10.1063/1.1147629

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A semiconductor detector is applied for measurement of high energy end loss ions (E⩾15 keV) from a tandem mirror. Its energy sensitivity to protons calibrated by using a monochromatic ion source is found to be the same as that to electrons. The semiconductor detector is installed on an end wall of the GAMMA 10 tandem mirror and high energy end loss ions are observed with the detector when ions in the confinement region are strongly heated by ion cyclotron waves. Counts of high energy end loss ions are closely related with a diamagnetic signal representing ion heating. The energy of the end loss ions spreads with time and attains to 50–60 keV. Time behavior of the ion count suggests that unknown loss processes other than classical Coulomb scattering are relevant to ion end loss. ©1997 American Institute of Physics.

 

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