We report the photoluminescence study of low‐energy, low‐dose oxygen implantation induced compositional disordering of AlGaAs/GaAs quantum well structures. Significant disordering of both single and multiple AlGaAs/GaAs quantum wells has been achieved using low‐energy (155 keV) oxygen ion implantation with doses as small as 5 × 1013cm−2after a moderate annealing step. These doses are significantly lower than those reported previously (500 keV and 1016cm−2).