Characterization by Raman scattering, x‐ray diffraction, and transmission electron microscopy of (AlAs)m(InAs)mshort period superlattices grown by migration enhanced epitaxy
作者:
J. Bradshaw,
X. J. Song,
J. R. Shealy,
J. G. Zhu,
H. O&slash;stergaard,
期刊:
Journal of Applied Physics
(AIP Available online 1992)
卷期:
Volume 72,
issue 1
页码: 308-310
ISSN:0021-8979
年代: 1992
DOI:10.1063/1.352139
出版商: AIP
数据来源: AIP
摘要:
We report growth of (InAs)1(AlAs)1and (InAs)2(AlAs)2strained layer superlattices by migration enhanced epitaxy. The samples were grown on InP (001) substrates and characterized by Raman spectroscopy, x‐ray diffraction, and transmission electron microscopy. Satellite peaks in the x‐ray data confirm the intended periodicity and indicate the presence of some disorder in the monolayer sample. The energies of the zone folded and quantum confined optic phonons are in reasonable agreement with calculations based on one‐dimensional elastic continuum and linear chain models.
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