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Characterization by Raman scattering, x‐ray diffraction, and transmission electron microscopy of (AlAs)m(InAs)mshort period superlattices grown by migration enhanced epitaxy

 

作者: J. Bradshaw,   X. J. Song,   J. R. Shealy,   J. G. Zhu,   H. O&slash;stergaard,  

 

期刊: Journal of Applied Physics  (AIP Available online 1992)
卷期: Volume 72, issue 1  

页码: 308-310

 

ISSN:0021-8979

 

年代: 1992

 

DOI:10.1063/1.352139

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We report growth of (InAs)1(AlAs)1and (InAs)2(AlAs)2strained layer superlattices by migration enhanced epitaxy. The samples were grown on InP (001) substrates and characterized by Raman spectroscopy, x‐ray diffraction, and transmission electron microscopy. Satellite peaks in the x‐ray data confirm the intended periodicity and indicate the presence of some disorder in the monolayer sample. The energies of the zone folded and quantum confined optic phonons are in reasonable agreement with calculations based on one‐dimensional elastic continuum and linear chain models.

 

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