Generation of diamond nuclei on amorphous SiO2by alternating‐current bias microwave plasma chemical vapor deposition
作者:
M. Y. Mao,
X. F. Jin,
T. P. Wang,
J. F. Xie,
S. S. Tan,
W. Y. Wang,
X. K. Zhang,
Z. C. Zhuang,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 1
页码: 16-18
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114166
出版商: AIP
数据来源: AIP
摘要:
The nucleation of diamond on the amorphous SiO2mirror surface has been achieved by means of adding an ac signal to the negative dc bias in the microwave plasma chemical vapor deposition. It is found in experiment that the nucleation of diamond happens only after the frequency of the ac signal exceeds a threshold. The results also show that the diamond nucleation density depends not only on the ac frequency but also on the magnitudes of the ac signal and the dc bias. ©1995 American Institute of Physics.
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