Insitureflectance anisotropy studies of AlxGa1−xAs layers grown on GaAs(001) by molecular beam epitaxy
作者:
S. J. Morris,
J.‐Th. Zettler,
K. C. Rose,
D. I. Westwood,
D. A. Woolf,
R. H. Williams,
W. Richter,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 77,
issue 7
页码: 3115-3120
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.358663
出版商: AIP
数据来源: AIP
摘要:
Reflectance anisotropy spectroscopy was used to examine the surfaces of AlxGa1−xAs layers grown on GaAs(001) by molecular beam epitaxy, where the Al mole fraction was varied across the whole composition rangex=(0.0,0.25,0.50,0.75,1.0). All surfaces were also independently characterized using reflection high‐energy electron diffraction, and were found to exhibit ac(4×4) reconstruction. After initial changes in the spectra were observed on depositing very thin layers (≤20 monolayers), in the intermediate thickness range a regime was entered in which strong optical interference effects appeared. These effects are accurately accounted for using a four‐media model. For thicker layers (≥8000 monolayers), interference effects were seen to diminish and spectra representative of the surfaces of bulk AlxGa1−xAs were obtained. ©1995 American Institute of Physics.
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