The design features and operating parameters of a cold‐cathode gas plasma electron beam apparatus for bombardment excitation of semiconductor samples is described. The gas plasma apparatus is capable of electron beam energies > 50 keV and current densities ≳50A/cm2, which are sufficient for semiconductor laser operation. Although photopumping and high surface losses do not permit the observation of anA‐line peak in0.4<x≲0.8 GaAs1−xPx:N+(N>1019/cm3), the deeper pumping of the gas plasma electron beam source permits observation of theA‐line, as is demonstrated onx= 0.53 material. The deeper excitation afforded by the gas plasma electron beam apparatus, and lower over‐all surface losses have permitted laser operation of indirect crystal (x>xc) made quasidirect by the N trap, as is shown (77 °K) on theA‐line transition inx= 0.47 (x>xc≈ 0.46) GaAs1‐xPx: N−(N < 1019/cm3).