首页   按字顺浏览 期刊浏览 卷期浏览 Tin diffusion and segregation in GaAs processed with a pulsed ruby laser
Tin diffusion and segregation in GaAs processed with a pulsed ruby laser

 

作者: B. J. Garcia,   J. Martinez,   J. Piqueras,   A. Mun˜oz‐Yagu¨e,   Ch. Fontaine,  

 

期刊: Journal of Applied Physics  （AIP Available online 1990）
卷期: Volume 68, issue 8  

页码: 3832-3837

 

ISSN:0021-8979

 

年代: 1990

 

DOI:10.1063/1.346267

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Tin‐diffused GaAs layer samples, with mean concentrations larger than 1019cm−3, were obtained by irradiating with a ruby laser GaAs substrates covered with thin tin layers. Mobilities between 100 and 200 cm2/V s were obtained. Both carrier concentration and mobility decrease with increasing energy density. Strong segregation effects were observed in the samples processed with large energy densities.

 

点击下载:  PDF (760KB)



返 回