Spectroscopic ellipsometry determination of the refractive index of strained Si1−xGexlayers in the near‐infrared wavelength range (0.9–1.7 &mgr;m)
作者:
J. C. G. de Sande,
A. Rodri´guez,
T. Rodri´guez,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 23
页码: 3402-3404
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114907
出版商: AIP
数据来源: AIP
摘要:
The refractive index of fully strained Si1−xGexlayers, with compositionsx=0.20, 0.25, 0.30, and 0.33, has been measured using spectroscopic ellipsometry as a function of the wavelength in the 0.9–1.7 &mgr;m range. The dependence of the refractive index on the wavelength, for these compositions, is similar to that of crystalline Si. Its value for any wavelength is lower than that of relaxed Si1−xGexof the same composition. The experimental values of the refractive index of the fully strained Si1−xGexwere fitted to the expressionnSiGe(x,&lgr;)=nSi(&lgr;)+(1.16–0.26 &lgr;)x2. This expression is applicable for wavelengths from 0.9 to 1.7 &mgr;m and compositionsx≤0.33. ©1995 American Institute of Physics.
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