Strain and structural characterization of Zn1−xCdxSe laser structures grown on GaAs and InGaAs (001) substrates
作者:
J. H. Li,
G. Bauer,
J. Stangl,
L. Vanzetti,
L. Sorba,
A. Franciosi,
期刊:
Journal of Applied Physics
(AIP Available online 1996)
卷期:
Volume 80,
issue 1
页码: 81-88
ISSN:0021-8979
年代: 1996
DOI:10.1063/1.362775
出版商: AIP
数据来源: AIP
摘要:
X‐ray reciprocal space mapping has been used to investigate the strain status of microgun‐pumped blue and blue‐green laser structures. The devices exploit graded‐index, separate confinement Zn1−xCdxSe/ZnSe heterostructures grown on InGaAs or GaAs substrates by molecular‐beam epitaxy. The location of the reciprocal lattice point of the ZnSe buffer layer within a normally forbidden region of reciprocal space indicates that the ZnSe buffer layer is unusually strained, with an appreciable biaxial tensile strain despite the smaller lattice parameter of the III–V substrate relative to ZnSe. We associate such a phenomenon with the presence of the highly strained laser structure coupled with preferential strain relaxation at the II–VI/III–V heterointerface. ©1996 American Institute of Physics.
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