Analysis of passivating oxide and surface contaminants on GaAs (100) by temperature‐dependent and angle resolved x‐ray photoelectron spectroscopy, and time‐of‐flight secondary ion mass spectrometry
作者:
F. Schröder,
W. Storm,
M. Altebockwinkel,
L. Wiedmann,
A. Benninghoven,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1992)
卷期:
Volume 10,
issue 4
页码: 1291-1296
ISSN:1071-1023
年代: 1992
DOI:10.1116/1.585858
出版商: American Vacuum Society
关键词: GALLIUM ARSENIDES;PASSIVATION;WAFERS;ANNEALING;IMPURITIES;DESORPTION;PHOTOELECTRON SPECTROSCOPY;X RADIATION;SIMS;CARBON ADDITIONS;TEMPERATURE DEPENDENCE;GALLIUM OXIDES;ARSENIC OXIDES;BINDING ENERGY;GaAs
数据来源: AIP
摘要:
Surface contaminations on GaAs (100) wafers have been analyzed by means of temperature‐dependent and angle resolved x‐ray photoelectron spectroscopy (TOXPS, ARXPS), and time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS). First, the dependence of the composition, chemical state, and diffusion behavior of the passivating thermal oxide on different annealing temperatures was investigated. The phases of this oxide can be described by a multilayer model and are consistent with the Ga–As–O equilibrium phase diagram. Second, the nature and amount of impurities at ambient and elevated temperatures was studied. No metal contaminants were found within the sensitivity of TOF‐SIMS. The residual amount of carbon contamination at the desorption temperature of the oxide depends on the amount of photon irradiation at ambient temperature.
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