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Epitaxial films of semiconducting FeSi2on (001) silicon

 

作者: John E. Mahan,   Kent M. Geib,   G. Y. Robinson,   Robert G. Long,   Yan Xinghua,   Gang Bai,   Marc‐A. Nicolet,   Menachem Nathan,  

 

期刊: Applied Physics Letters  （AIP Available online 1990）
卷期: Volume 56, issue 21  

页码: 2126-2128

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.103235

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Epitaxial thin films of the semiconducting transition metal silicide, beta‐FeSi2, were grown on (001) silicon wafers. The observed matching face relationship is FeSi2(100)/Si(001), with the azimuthal orientation being FeSi2[010]‖‖Si⟨110⟩. This heteroepitaxial relationship has a common unit mesh of 59 A˚2area, with a mismatch of 2.1%. There is a strong tendency toward island formation within this heteroepitaxial system.

 

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