We reply to the comment by Fro¨jdh and Petersson concerning the measurements of the barrier heights of Schottky diodes on 6H‐SiC. We present the argument that the temperature range over which Fro¨jdh and Petersson present data does not allow accurate comparison with our results. The problem of interaction of deep levels in the capacitance‐voltage measurements is refuted by deep‐level transient spectroscopy data. We conclude that our data are accurate and our methods reliable. ©1996 American Institute of Physics.