首页   按字顺浏览 期刊浏览 卷期浏览 Energy level of the nitrogen dangling bond in amorphous silicon nitride
Energy level of the nitrogen dangling bond in amorphous silicon nitride

 

作者: W. L. Warren,   J. Kanicki,   J. Robertson,   P. M. Lenahan,  

 

期刊: Applied Physics Letters  (AIP Available online 1991)
卷期: Volume 59, issue 14  

页码: 1699-1701

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.106222

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The composition dependence and room‐temperature metastability of the paramagnetic nitrogen dangling‐bond center is amorphous silicon nitride suggest that its energy level lies close to the Np&pgr; states, in agreement with theoretical calculations.

 

点击下载:  PDF (381KB)



返 回