A continuous CO2laser was used for the first time to anneal the damage in GaAs0.6P0.4induced during nitrogen implantation and to create nitrogen isoelectronic traps. Laser‐annealed samples showed isoelectronic signals which are by a factor of 6–7 stronger as compared with thermally annealed samples. The intensity of the nitrogen‐induced emission from the laser‐annealed samples was up to 50% higher than that of the near‐band‐gap emission from the starting material.