Wide bandwidth AlAs/Al0.6Ga0.4As tandem Bragg reflectors were grown by organometallic vapor phase epitaxy. Quarter‐wave reflector stacks designed for different wavelengths were placed in cascade in epitaxially grown structures to expand the high reflectance bands. Intermediate low‐index layers were put in between every two stacks to suppress the transmission peaks in the centers of the combined high reflectance bands. While a single‐stack structure showed a full width half‐maximum bandwidth of 500 A˚, the two‐stack and the three‐stack structures effectively doubled and tripled this bandwidth to approximately 1000 and 1500 A˚, respectively. ©1995 American Institute of Physics.