Comparison of CSD and sputtered PZT with iridium electrodes
作者:
GlenR. Fox,
Shan Sun,
Brian Eastep,
T.Domokos Hadnagy,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1999)
卷期:
Volume 26,
issue 1-4
页码: 215-223
ISSN:1058-4587
年代: 1999
DOI:10.1080/10584589908215623
出版商: Taylor & Francis Group
关键词: PZT;iridium;hydrogen degradation;ferroelectric;thin films
数据来源: Taylor
摘要:
Several recent reports have combined Ir electrodes with PbZrxTi1−xO3(PZT) made by chemical solution deposition (CSD) to produce capacitors with low fatigue rates, but the same behavior has not been reported for sputtered PZT with Ir electrodes. This paper presents a comparison of the performance of sputtered and CSD PZT capacitors with Ir electrodes. It was found that replacing the Pt top electrode with Ir was sufficient for obtaining improved fatigue performance for both sputtered and CSD deposited PZT. A comparison of Ir and Pt top electrodes shows that Ir can extend the number of useful switching cycles by 3 to 4 orders of magnitude for both sputtered and CSD deposited PZT. As has been previously observed for Pt electrodes, the fatigue with Ir top electrodes is dependent on the switching voltage. Excellent fatigue performance has been observed to 1011cycles for both 3 and 5 V switching potentials. In addition to fatigue performance, a detailed analysis of switching, retention and leakage current behavior will also be presented.
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