Ballistic electron emission microscopy studies of electron scattering in Au/GaAs Schottky diodes damaged by focused ion beam implantation
作者:
J. W. McNabb,
H. G. Craighead,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1996)
卷期:
Volume 14,
issue 2
页码: 617-622
ISSN:1071-1023
年代: 1996
DOI:10.1116/1.589146
出版商: American Vacuum Society
关键词: SCHOTTKY BARRIER DIODES;GOLD;GALLIUM ARSENIDES;SILICON ADDITIONS;ION IMPLANTATION;PHYSICAL RADIATION EFFECTS;GOLD IONS;KEV RANGE 10−100;ELECTRON EMISSION;SCATTERING;MICROSCOPY;Au;GaAs:Si
数据来源: AIP
摘要:
Ballistic electron emission microscopy is used to investigate the electron scattering properties of undamaged and focused ion beam implanted Au/GaAs diodes. Implanted regions show decreased ballistic electron transmission attributed to increased scattering. A quantitative model of electron transport is developed that includes quantum mechanical transmission at the interface, scattering effects from optical phonons and implantation induced defects in the semiconductor, and scattering in the metal layer. Model predictions of scattering in undamaged regions show good agreement with the data. However, we conclude additional scattering effects must be included to describe the implanted structures.
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