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Growth of very low deep impurity density (Nt<5×1011cm−3) InxGa1−xP on GaAs by metalorganic chemical vapor deposition

 

作者: Z. C. Huang,   Bing Yang,   H. K. Chen,   J. C. Chen,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1995）
卷期: Volume 13, issue 5  

页码: 2049-2052

 

ISSN:1071-1023

 

年代: 1995

 

DOI:10.1116/1.588131

 

出版商: American Vacuum Society

 

关键词: GALLIUM ARSENIDES;GALLIUM PHOSPHIDES;HETEROJUNCTIONS;IMPURITIES;INDIUM PHOSPHIDES;SUBSTRATES;(In,Ga)P;GaAs

 

数据来源: AIP

 

摘要:

InxGa1−xP layers lattice matched and lattice mismatched to GaAs substrates have been grown by metalorganic chemical vapor deposition (MOCVD). Deep level transient spectroscopy, double crystal x‐ray diffraction, and current–voltage measurement were employed to characterize InxGa1−xP layers and InxGa1−xP/GaAs heterojunctions. We have observed a shallow electron trap located atEC−60 meV in InxGa1−xP layers withx<0.469, and a deep electron trap atEC−0.85 eV withx≳0.532. However, no deep levels were detected in InxGa1−xP (0.469

 

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