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Quantum‐well intermixing in Si1−xGex/Si strained‐layer heterostructures using ion implantation

 

作者: D. Labrie,   H. Lafontaine,   N. Rowell,   S. Charbonneau,   D. Houghton,   R. D. Goldberg,   I. V. Mitchell,  

 

期刊: Applied Physics Letters  （AIP Available online 1996）
卷期: Volume 69, issue 7  

页码: 993-995

 

ISSN:0003-6951

 

年代: 1996

 

DOI:10.1063/1.117106

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A demonstration of quantum well intermixing using ion implantation in Si1−xGex/Si strained‐layer heterostructures is presented. The quantum‐well related photoluminescence lines of implanted and annealed samples are blue shifted by up to 40 meV relative to those measured in annealed‐only samples. Optical and structural qualities of the heterostructure remain high after implantation and annealing treatments. ©1996 American Institute of Physics.

 

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