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Radiative Recombination in Tin‐Doped Germanium

 

作者: K. M. Hergenrother,   J. M. Feldman,  

 

期刊: Journal of Applied Physics  （AIP Available online 1969）
卷期: Volume 40, issue 5  

页码: 2323-2324

 

ISSN:0021-8979

 

年代: 1969

 

DOI:10.1063/1.1657981

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Strong radiative recombination with 0.49 eV energy at 77°K is found in Ge containing Sn. It is proposed that this radiation is due to excitons bound to an isoelectronic Sn center.

 

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