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A positron annihilation study of defects in neutron transmutation‐doped float‐zone (Ar)‐Si

 

作者: Werner Puff,   Xiang‐ti Meng,  

 

期刊: Journal of Applied Physics  （AIP Available online 1993）
卷期: Volume 73, issue 2  

页码: 648-651

 

ISSN:0021-8979

 

年代: 1993

 

DOI:10.1063/1.353346

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Annealing of defects introduced by neutron transmutation doping of float‐zone silicon has been investigated by positron lifetime spectroscopy and Doppler‐broadening measurements. It is shown that the main defects anneal out at about 150 and 500 °C. During annealing, the formation of bigger defect complexes can be seen.

 

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