The first observation of localized vibrational modes for an implanted ion in Ge is reported. The localized mode for interstitial oxygen at 856 cm−1and additional weak oxygen‐associated absorption bands between 700 and 850 cm−1have been observed by infrared absorption following oxygen implantation at 200 °C. Infrared detection of the vibrational modes for oxygen implanted into Ge at room temperature is precluded by ion‐induced disorder and by absorption presumably associated with free carriers in the implanted layer.