1.55 &mgr;m single-mode lasers with combined gain coupling and lateral carrier confinement by focused ion-beam implantation
作者:
H. Ko¨nig,
J. P. Reithmaier,
A. Forchel,
J. L. Gentner,
L. Goldstein,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 19
页码: 2703-2705
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.122564
出版商: AIP
数据来源: AIP
摘要:
Laterally gain-coupled distributed feedback GaInAsP/InP lasers were fabricated by focused ion-beam implantation and rapid thermal annealing of ridge waveguide structures. An absorption grating, which interacts with the evanescent light field, is formed by a periodic reduction of the band-gap absorption in the passive sections along the ridge. Room-temperature single-mode emission was observed at 1.5 &mgr;m with a 30 dB side-mode suppression ratio. Simultaneously, the increase of the band gap in the implanted section results in improved carrier confinement, which reduces the leakage current and improves the laser performance in comparison to unimplanted ridge waveguide lasers. ©1998 American Institute of Physics.
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