Microstructure and epitaxial characteristics of PbTiO3ferroelectric thin film on NaCI by mocvd
作者:
Wen-Hui Ma,
Qi Li,
Yan-Feng Chen,
Tao Yu,
Nai-Ben Ming,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1995)
卷期:
Volume 8,
issue 3-4
页码: 291-297
ISSN:1058-4587
年代: 1995
DOI:10.1080/10584589508219663
出版商: Taylor & Francis Group
关键词: Domain;ferroelectric thin films;epitaxial growth;45°;rotated grain;MOCVD
数据来源: Taylor
摘要:
Ferroelectric PbTiO3thin films have been epitaxially grown on (100) NaCl cleavage surface by MOCVD using tetraethyllead and titanium isopropoxide as precursors. The microstructures and epitaxial characteristics of as-grown thin films were investigated by means of transmission electron microscopy. TEM studies have shown that the epitaxial thin film was highly (001) oriented and even near single-crystal epitaxy if without a small volume of 45° rotated grains, the average grain size is around 1000 A. Lowangle grain boundary formed universally when islands coalesced during the early stage of epitaxial growth. A possible growth mechanism has been given to explain this epitaxial phenomenon by consideration of two-dimensional coincidence superlattice. 90° ferroelectric domains were also observed both in the large matrix grains and small 45° rotated grains.
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