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Microstructure and epitaxial characteristics of PbTiO3ferroelectric thin film on NaCI by mocvd

 

作者: Wen-Hui Ma,   Qi Li,   Yan-Feng Chen,   Tao Yu,   Nai-Ben Ming,  

 

期刊: Integrated Ferroelectrics  (Taylor Available online 1995)
卷期: Volume 8, issue 3-4  

页码: 291-297

 

ISSN:1058-4587

 

年代: 1995

 

DOI:10.1080/10584589508219663

 

出版商: Taylor & Francis Group

 

关键词: Domain;ferroelectric thin films;epitaxial growth;45°;rotated grain;MOCVD

 

数据来源: Taylor

 

摘要:

Ferroelectric PbTiO3thin films have been epitaxially grown on (100) NaCl cleavage surface by MOCVD using tetraethyllead and titanium isopropoxide as precursors. The microstructures and epitaxial characteristics of as-grown thin films were investigated by means of transmission electron microscopy. TEM studies have shown that the epitaxial thin film was highly (001) oriented and even near single-crystal epitaxy if without a small volume of 45° rotated grains, the average grain size is around 1000 A. Lowangle grain boundary formed universally when islands coalesced during the early stage of epitaxial growth. A possible growth mechanism has been given to explain this epitaxial phenomenon by consideration of two-dimensional coincidence superlattice. 90° ferroelectric domains were also observed both in the large matrix grains and small 45° rotated grains.

 

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