The Schottky barrier height for holes in hafnium (Hf)‐p‐type silicon junctions was determined to be 0.58±0.02 eV by current‐voltage, capacitance‐voltage, and photothreshold techniques. The barrier height determined here does not agree with the earlier reported value of 0.90 eV by Saxena. We have shown that interface effects can account for only minor changes—viz., 0.02 eV in our barrier height value. The reasons for the discrepancy with Saxena's value are not fully understood, but our results are consistent with those expected from conventional Schottky barrier models.