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Deep‐ultraviolet induced wet etching of GaAs

 

作者: D. V. Podlesnik,   H. H. Gilgen,   R. M. Osgood,  

 

期刊: Applied Physics Letters  （AIP Available online 1984）
卷期: Volume 45, issue 5  

页码: 563-565

 

ISSN:0003-6951

 

年代: 1984

 

DOI:10.1063/1.95281

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We report on deep‐ultraviolet (UV), light‐assisted wet etching of GaAs. The etching chemistry differs from that using visible wavelengths and all doping types of GaAs can be efficiently etched. The UV processing offers rapid etching at low, nonthermal laser intensities and permits very deep, vertical features to be made.

 

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