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Semiconductor quantum point contact fabricated by lithography with an atomic force microscope

 

作者: R. Held,   T. Heinzel,   P. Studerus,   K. Ensslin,   M. Holland,  

 

期刊: Applied Physics Letters  (AIP Available online 1997)
卷期: Volume 71, issue 18  

页码: 2689-2691

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.120137

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We report on the experimental realization of a quantum point contact in a semiconductor heterostructure by lithography with an atomic force microscope (AFM). A thin, homogeneous titanium film on top of the chip surface was patterned by local anodic oxidation, induced by a current applied to ann-doped AFM tip. We demonstrate that self-aligned gate structures in the sub-micron regime can be fabricated with this technique. ©1997 American Institute of Physics.

 

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