Semiconductor quantum point contact fabricated by lithography with an atomic force microscope
作者:
R. Held,
T. Heinzel,
P. Studerus,
K. Ensslin,
M. Holland,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 18
页码: 2689-2691
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120137
出版商: AIP
数据来源: AIP
摘要:
We report on the experimental realization of a quantum point contact in a semiconductor heterostructure by lithography with an atomic force microscope (AFM). A thin, homogeneous titanium film on top of the chip surface was patterned by local anodic oxidation, induced by a current applied to ann-doped AFM tip. We demonstrate that self-aligned gate structures in the sub-micron regime can be fabricated with this technique. ©1997 American Institute of Physics.
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