Preparation of homogeneous Cu(InGa)Se2films by selenization of metal precursors in H2Se atmosphere
作者:
M. Marudachalam,
H. Hichri,
R. Klenk,
R. W. Birkmire,
W. N. Shafarman,
J. M. Schultz,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 26
页码: 3978-3980
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114424
出版商: AIP
数据来源: AIP
摘要:
Homogeneous single phase Cu(InGa)Se2films with Ga/(In+Ga)=0.25–0.75 were formed by reacting Cu–Ga–In precursor films in H2Se followed by an anneal in Ar. X‐ray diffraction and Auger analysis show that the metal precursors reacted only in H2Se were multiphase films having a layered CuInSe2/CuGaSe2structure. Solar cells made with the multiphase films have properties similar to CuInSe2devices. Cells made with the annealed single phase films behave like Cu(InGa)Se2devices with the band gap expected for the precursor composition. ©1995 American Institute of Physics.
点击下载:
PDF
(55KB)
返 回