Novel InGaAs/GaAs quantum dot structures formed in tetrahedral‐shaped recesses on (111)B GaAs substrate using metalorganic vapor phase epitaxy
作者:
Yoshihiro Sugiyama,
Yoshiki Sakuma,
Shunichi Muto,
Naoki Yokoyama,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 2
页码: 256-258
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114685
出版商: AIP
数据来源: AIP
摘要:
We report a novel GaAs/InGaAs/GaAs quantum dot structure formed in a tetrahedral‐shaped recess (TSR) patterned on a (111)B GaAs substrate with anisotropic chemical etching. The pseudomorphic heterostructure shows two clear photoluminescence peaks which are attributed to an In anisotropic incorporation on (111)B compared to (111)A. Cathodoluminescence at a lower energy peak with InGaAs of 2.5 nm shows a bright image at the bottom of TSRs which indicates the local minimum in potential energy at the bottom of TSR. ©1995 American Institute of Physics.
点击下载:
PDF
(213KB)
返 回