We report on the use of x‐ray photoelectron spectroscopy for the investigation of radiation damage in GaAs. The technique has been used to profile the damage induced by 7 MeV Si+ions. Arsenic displaced by the ions is found in an interstitial elementary state. Using chemical etching, we are able to trace the distribution of As displacement. The results are in good agreement withtrimcalculations of radiation damage. The potential applications of this technique to the study of the nature and distribution of radiation damage are discussed.