Determination of the cubic to hexagonal fraction in GaN nucleation layers using grazing incidence x-ray scattering
作者:
A. Munkholm,
C. Thompson,
C. M. Foster,
J. A. Eastman,
O. Auciello,
G. B. Stephenson,
P. Fini,
S. P. DenBaars,
J. S. Speck,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 23
页码: 2972-2974
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121511
出版商: AIP
数据来源: AIP
摘要:
Recent electron diffraction and microscopy studies of GaN nucleation layers have shown that faults in the stacking of the close-packed planes result in the coexistence of cubic and hexagonal phases within the layers. Using grazing incidence x-ray scattering, we have quantified the proportion of the cubic and hexagonal phases throughout the nucleation layer. We compare the structure of a 20 nm nucleation layer grown on sapphire by atmospheric pressure metal-organic chemical vapor deposition at525 °Cto that of an identical layer heated to1060 °C.The fractions of cubic and hexagonal phases in the layers are determined by a comparison of the scattering data with a Hendricks–Teller model. High temperature exposure results in a decrease of the cubic fraction from 0.56 to 0.17. The good agreement with the Hendricks–Teller model indicates that the positions of the stacking faults are uncorrelated. ©1998 American Institute of Physics.
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