Sustained growth of long lengths of silicon ribbons by the edge‐defined film‐fed growth (EFG) technique is shown to result in the attainment of an ’’equilibrium’’ defect structure and orientation by the crystals. The structure consists of parallel defect boundaries parallel to the edges of the ribbon with a ribbon orientation of {110} ⟨211⟩. The influence of seed orientation on the attainment of this structure has been examined.