We report that the distribution of localized density of statesg(E) for hydrogenated amorphous silicon can be estimated by the electrophotographic (xerographic) method. The density of states near midgap can be evaluated to be about 1×1016 cm−3 eV−1for undoped films. The general trend and the shape ofg(E) are similar to those obtained by the deep level transient spectroscopy and the photothermal deflection spectroscopy.