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Compensation densities inn‐type Hg1−xCdxTe from transport properties of optically generated free carriers

 

作者: F. J. Bartoli,   C. A. Hoffman,   J. R. Meyer,  

 

期刊: Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films  （AIP Available online 1983）
卷期: Volume 1, issue 3  

页码: 1669-1671

 

ISSN:0734-2101

 

年代: 1983

 

DOI:10.1116/1.572253

 

出版商: American Vacuum Society

 

关键词: carrier density;holes;charge carriers;electron mobility;screening;multi−photon processes;carbon dioxide lasers;laser radiation;charged−particle transport;mercury tellurides;cadmium tellurides

 

数据来源: AIP

 

摘要:

Improvements to a photoneutralization technique for accurately determining compensation densities in narrow‐gap Hg1−xCdxTe are discussed. A more comprehensive theoretical understanding of the electron mobility as a function of optically excited carrier density has been established, incorporating a theory for dynamic dielectric screening in the treatment of electron‐hole scattering. In addition, uniform carrier generation has been demonstrated using two‐photon absorption of CO2laser radiation for compositions in the range 0.24

 

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